Mfr# | TC58BVG2S0HBAI4 |
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Mfr. | Toshiba Memory America, Inc. |
Description | IC FLASH 4G PARALLEL 63TFBGA |
RoHs Status | Lead free / RoHS Compliant |
More Information | Leam more about Toshiba Memory America, Inc. TC58BVG2S0HBAI4 |
Datasheets | TC58BVG2S0HBAI4.pdf |
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Part Number | TC58BVG2S0HBAI4 |
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Manufacturer | Toshiba Memory America, Inc. |
Description | IC FLASH 4G PARALLEL 63TFBGA |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 9331 pcs |
Datasheets | TC58BVG2S0HBAI4.pdf |
Write Cycle Time - Word, Page | 25ns |
Voltage - Supply | 2.7 V ~ 3.6 V |
Technology | FLASH - NAND (SLC) |
Supplier Device Package | 63-TFBGA (9x11) |
Series | Benand™ |
Packaging | Tray |
Package / Case | 63-VFBGA |
Other Names | ASTC58BVG2S0HBAI4 TC58BVG2S0HBAI4JDH TC58BVG2S0HBAI4YCL TC58BVG2S0HBAIJDH |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Memory Type | Non-Volatile |
Memory Size | 4Gb (512M x 8) |
Memory Interface | Parallel |
Memory Format | FLASH |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Detailed Description | FLASH - NAND (SLC) Memory IC 4Gb (512M x 8) Parallel 25ns 63-TFBGA (9x11) |
Access Time | 25ns |