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TC58BVG2S0HBAI4

Mfr# TC58BVG2S0HBAI4
Mfr. Toshiba Memory America, Inc.
Description IC FLASH 4G PARALLEL 63TFBGA
RoHs Status Lead free / RoHS Compliant
More Information Leam more about Toshiba Memory America, Inc. TC58BVG2S0HBAI4
Datasheets TC58BVG2S0HBAI4.pdf

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  • In stock:9331 pcs
  • On Order:0 pcs
  • Minimum:1 pcs
  • Multiples:1 pcs
  • Factory Lead-Time::Call

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Product Parameter

Part Number TC58BVG2S0HBAI4
Manufacturer Toshiba Memory America, Inc.
Description IC FLASH 4G PARALLEL 63TFBGA
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 9331 pcs
Datasheets TC58BVG2S0HBAI4.pdf
Write Cycle Time - Word, Page 25ns
Voltage - Supply 2.7 V ~ 3.6 V
Technology FLASH - NAND (SLC)
Supplier Device Package 63-TFBGA (9x11)
Series Benand™
Packaging Tray
Package / Case 63-VFBGA
Other Names ASTC58BVG2S0HBAI4
TC58BVG2S0HBAI4JDH
TC58BVG2S0HBAI4YCL
TC58BVG2S0HBAIJDH
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Memory Type Non-Volatile
Memory Size 4Gb (512M x 8)
Memory Interface Parallel
Memory Format FLASH
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description FLASH - NAND (SLC) Memory IC 4Gb (512M x 8) Parallel 25ns 63-TFBGA (9x11)
Access Time 25ns

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