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TC58NYG1S3HBAI6

Mfr# TC58NYG1S3HBAI6
Mfr. Toshiba Memory America, Inc.
Description IC FLASH 2G PARALLEL 67VFBGA
RoHs Status Lead free / RoHS Compliant
More Information Leam more about Toshiba Memory America, Inc. TC58NYG1S3HBAI6
Datasheets TC58NYG1S3HBAI6.pdf

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  • In stock:11523 pcs
  • On Order:0 pcs
  • Minimum:1 pcs
  • Multiples:1 pcs
  • Factory Lead-Time::Call

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Product Parameter

Part Number TC58NYG1S3HBAI6
Manufacturer Toshiba Memory America, Inc.
Description IC FLASH 2G PARALLEL 67VFBGA
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 11523 pcs
Datasheets TC58NYG1S3HBAI6.pdf
Write Cycle Time - Word, Page 25ns
Voltage - Supply 1.7 V ~ 1.95 V
Technology FLASH - NAND (SLC)
Supplier Device Package 67-VFBGA (6.5x8)
Series -
Packaging Tray
Package / Case 67-VFBGA
Other Names TC58NYG1S3HBAI6JDH
TC58NYG1S3HBAI6YCL
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Memory Type Non-Volatile
Memory Size 2Gb (256M x 8)
Memory Interface Parallel
Memory Format FLASH
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description FLASH - NAND (SLC) Memory IC 2Gb (256M x 8) Parallel 25ns 67-VFBGA (6.5x8)
Access Time 25ns

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