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TH58BVG2S3HTAI0

Mfr# TH58BVG2S3HTAI0
Mfr. Toshiba Memory America, Inc.
Description IC FLASH 4G PARALLEL 48TSOP I
RoHs Status Lead free / RoHS Compliant
More Information Leam more about Toshiba Memory America, Inc. TH58BVG2S3HTAI0
Datasheets TH58BVG2S3HTAI0.pdf

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  • In stock:7220 pcs
  • On Order:0 pcs
  • Minimum:1 pcs
  • Multiples:1 pcs
  • Factory Lead-Time::Call

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Product Parameter

Part Number TH58BVG2S3HTAI0
Manufacturer Toshiba Memory America, Inc.
Description IC FLASH 4G PARALLEL 48TSOP I
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 7220 pcs
Datasheets TH58BVG2S3HTAI0.pdf
Write Cycle Time - Word, Page 25ns
Voltage - Supply 2.7 V ~ 3.6 V
Technology FLASH - NAND (SLC)
Supplier Device Package 48-TSOP I
Series Benand™
Packaging Tray
Package / Case 48-TFSOP (0.724", 18.40mm Width)
Other Names TH58BVG2S3HTAI0B4H
TH58BVG2S3HTAI0YCJ
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Memory Type Non-Volatile
Memory Size 4Gb (512M x 8)
Memory Interface Parallel
Memory Format FLASH
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description FLASH - NAND (SLC) Memory IC 4Gb (512M x 8) Parallel 25ns 48-TSOP I
Access Time 25ns

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